Power Transistor (PNP)
2SB817E
Power Transistor (PNP)
Features
•
2SB817E transistor is designed for use in general purpose
power amplifier, application
Mechanical Data
Case:
Terminals:
Weight:
TO-3P, Plastic Package
Plated leads solderable per MIL-STD-750, Method 2026
0.22 ounce, 6.2 gram
TO-3P
Maximum Ratings
(T
Ambient
=25ºC unless noted otherwise)
Symbol
Description
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Power Dissipation at T
C
=25°C
2SB817E
160
140
6.0
12
15
100
0.8
1.25
-55 to +150
Unit
V
V
V
A
A
W
W/° C
° C /W
°C
Conditions
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
Power Dissipation Derate above 25°C
R
θJC
T
J,
T
STG
Thermal Resistance from Junction to Case
Operating and Storage Junction Temperature
Range
TAITRON COMPONENTS INCORPORATED
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Tel: (800)-TAITRON
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(800)-824-8766
(800)-824-8329
(661)-257-6060
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Rev. A/AH 2008-04-16
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