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THN6701B 参数 Datasheet PDF下载

THN6701B图片预览
型号: THN6701B
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF功率晶体管 [NPN SiGe RF POWER TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 254 K
品牌: TACHYONICS [ TACHYONICS CO,. LTD ]
 浏览型号THN6701B的Datasheet PDF文件第1页浏览型号THN6701B的Datasheet PDF文件第2页浏览型号THN6701B的Datasheet PDF文件第4页浏览型号THN6701B的Datasheet PDF文件第5页浏览型号THN6701B的Datasheet PDF文件第6页  
Preliminary Specification
Typical Characteristics ( T
A
= 25
, unless otherwise specified)
Collector Current vs.
Base to Emitter Voltage
Reverse Transfer Capacitance, C
re
(pF)
THN6701B
Reverse Transfer Capacitance
vs. Collector to Base Voltage
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
0
2
4
6
8
10
500
Collector Current, I
C
(mA)
V
CE
= 6 V
400
300
200
100
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage, V
BE
(V)
Collector to Base Voltage, V
CB
(V)
DC Current Gain
vs. Collector Current
150
V
CE
= 6 V
Collector Current
vs. Collector to Emitter Voltage
0.9
0.8
Collector Current, I
C
(A)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
B
step = 2 mA
125
DC Current Gain, h
FE
100
75
50
25
0
-3
10
10
-2
10
-1
10
0
0
1
2
3
4
5
6
7
8
Collector Current, I
C
(A)
Collector to Emitter Voltage, V
CE
(V)
http://www.tachyonics.co.kr
Sept. 2005.
Page 3 of 6
Rev. 1.0