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THN6701B 参数 Datasheet PDF下载

THN6701B图片预览
型号: THN6701B
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF功率晶体管 [NPN SiGe RF POWER TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 254 K
品牌: TACHYONICS [ TACHYONICS CO,. LTD ]
 浏览型号THN6701B的Datasheet PDF文件第1页浏览型号THN6701B的Datasheet PDF文件第3页浏览型号THN6701B的Datasheet PDF文件第4页浏览型号THN6701B的Datasheet PDF文件第5页浏览型号THN6701B的Datasheet PDF文件第6页  
Preliminary Specification
Thermal Characteristics
Symbol
R
th j-a
Parameter
Thermal Resistance from Junction to Ambient
THN6701B
Value
27
Unit
K/W
Electrical Characteristics
(T
A
= 25
℃)
Parameter
Collector Cut-off Current
Symbol
I
CBO
I
CEO
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
I
EBO
h
FE
C
re
Test Conditions
V
CB
= 15 V, I
E
= 0 mA
V
CE
= 11 V, I
B
= 0 mA
V
EB
= 1.0 V, I
C
= 0 mA
V
CE
= 6 V, I
C
= 200 mA
V
CB
= 6 V, I
E
= 0 mA, f = 1 MHz
Min.
-
-
-
40
-
Typ.
-
-
-
-
6.2
Max.
1.0
5.0
1.0
300
-
pF
Unit
h
FE
Classification
Marking
h
FE
Value
R6701
40 - 200
R6701
·
170 - 300
http://www.tachyonics.co.kr
Sept. 2005.
Page 2 of 6
Rev. 1.0