THN6501S
□ Electrical Characteristics ( TA = 25 ℃)
SYMBOL
PARAMETER
CONDITION
VALUE
Unit
m in
20
typ m ax
VCBO
VCEO
ICBO
IEBO
hfe
ICE = 100uA, IE = 0
ICE = 100uA, IB = 0
VCB = 10V, IE = 0
VEB = 1V, IC = 0
25
13
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Cut-off current
Emitter-Cut-off current
D.C Current Gain
12
100
100
300
n A
n A
VCE = 3V, Ic = 7mA
VCE = 3V, Ic = 7mA
130
fT
5
GHz
pF
Transition Frequency
CCB
Collector-Base Capacitance VCB = 10V, f = 1MHz
0.90
□ Performance Characteristics
SYMBOL
PARAMETER
CONDITION
VALUE
Unit
m in
typ m ax
VCE=3V, Ic=7mA,f=1GHz
VCE=3V, Ic=15mA,f=1GHz
VCE=3V, Ic=7mA,f=1GHz
VCE=3V, Ic=15mA,f=1GHz
VCE=3V, Ic=7mA,f=1GHz
VCE=3V, Ic=7mA,f=1GHz
VCE=3V, Ic=7mA,f=1GHz
VCE=3V, Ic=15mA,f=1GHz
VCE=6V, Ic=15mA,f=1GHz
9.5
11
[S21]2
Insertion Power Gain
dB
dB
Maximum Stable Gain
Maximum Available Gain
Minimum Noise Figure
Noise Resistance
MSG
MAG
NFmin
rn
14
14.5
1.0
dB
0.056
12
Ω
Associated Gain
GA
dB
12.5
27
Output 3rd Intercept
OIP3
dBm
www.tachyonics.co.kr
Aug-25-2003
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