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THN6301S 参数 Datasheet PDF下载

THN6301S图片预览
型号: THN6301S
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管 [NPN SiGe RF TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 11 页 / 207 K
品牌: TACHYONICS [ TACHYONICS CO,. LTD ]
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THN6301 Series
Maximum Available Gain, MAG vs. Frequency
Insertion Power Gain, |S
21
|
2
vs. Frequency
26
24
d (T R 1 0 E s t5 3 8 1 m _ 2 8 6 (2 ))
B A F 5 3 _ o 2 _ v 5 A 0 0 1 ..S ,1
2
(S
|S
dB (2,1))
21
| [dB]
T R 1 0 E s t5 3 8 1 m _ 2 8 6 a G in
A F 5 3 _ o 2 _ v 5 A 0 0 1 ..M x a 1
Mx a 1
G in
MAG
a
[dB]
24
22
20
18
16
14
12
10
8
6
4
22
20
18
16
V
CE
= 8 V
I
C
= 15 mA
V
CE
= 3 V
I
C
= 15 mA
V
CE
= 8 V
I
C
= 15 mA
14
12
V
CE
= 3 V
I
C
= 15 mA
10
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
freq, GHz
Frequency [GHz]
freq, GHz
Frequency
[GHz]
Transition Frequency, f
T
vs. I
C
14
Maximum Available Gain, MAG vs. I
C
20
12
V
CE
= 8 V
19
18
f = 1 GHz
V
CE
= 8 V
10
V
CE
= 3 V
17
V
CE
= 3 V
MAG [dB]
f
T
[GHz]
8
16
15
14
13
6
4
2
V
CE
= 2 V
12
11
V
CE
= 2 V
0
0
5
10
15
20
25
30
35
40
45
10
0
5
10
15
20
25
30
35
40
45
I
C
[mA]
I
C
[mA]
www.tachyonics.co.kr
- 4/11 -
Aug.-2005
Rev 2.0