THN5601B
□
DC CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
S
h
FE
C
CB
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
CONDITION
open emitter
open base
open collector
MIN.
20
8
3
0.1
60
MAX.
UNIT
V
V
V
mA
4.5
pF
160
Hfe 140
120
100
80
60
40
20
6
Cc
[pF]
5
4
3
2
0
0.00
0
0.10
0.20
0.30
0.40
Ic(A)
0.50
2
4
6
8
10
V
CB
[V]
V
CE
= 4.8V ; Tj =25℃
f=900MHz; V
CE
=4.8V; I
CQ
=5mA; Ts < 60℃
Fig 1. DC Current gain v.s Collector current
Fig 2. Collector-base capacitance v.s Collector-
base voltage(DC)
www.tachyonics.co.kr
- 3/7 -
Mar-22-2005
Rev 1.2