THN5601B
NPN SiGe RF POWER
TRANSISTOR
The THN5601B is a low cost, NPN medium power
SiGe HBT(Hetero-Junction Bipolar Transistor)
encapsulated in a plastic SOT-223 SMD package.
The THN5601B can be used as a driver device or
an output device, depending on the specific app-
lication.
□
FEATURES
o 4.8 Volt operation
o P1dB 28 dBm @f=900MHz
o Power gain 8.5 dB @f=900MHz
PIN CONFIGURATION
□
APPLICATIONS
o Hand-held radio equipment in common
emitter class-AB operation in 900 MHz
communication band.
PIN NO
1
2
3
4
SYMBOL
E
B
E
C
DESCRIPTION
emitter
base
emitter
collector
□
MAXIMUM RATINGS
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ts = 60℃ ; note 1
CONDITION
Open Emitter
Open Base
Open Collector
VALUE
20
8
3
350
1
-65 ~ 150
150
Unit
V
V
V
mA
W
℃
℃
www.tachyonics.co.kr
- 1/7 -
Mar-22-2005
Rev 1.2
TACHYONICS [ TACHYONICS CO,. LTD ]
