欢迎访问ic37.com |
会员登录 免费注册
发布采购

SPN8882 参数 Datasheet PDF下载

SPN8882图片预览
型号: SPN8882
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 9 页 / 240 K
品牌: SYNC-POWER [ SYNC POWER CROP. ]
 浏览型号SPN8882的Datasheet PDF文件第1页浏览型号SPN8882的Datasheet PDF文件第3页浏览型号SPN8882的Datasheet PDF文件第4页浏览型号SPN8882的Datasheet PDF文件第5页浏览型号SPN8882的Datasheet PDF文件第6页浏览型号SPN8882的Datasheet PDF文件第7页浏览型号SPN8882的Datasheet PDF文件第8页浏览型号SPN8882的Datasheet PDF文件第9页  
SPN8882
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
ORDERING INFORMATION
Part Number
SPN8882T252R
SPN8882T251T
SPN8882T252RG : Tape Reel ; Pb – Free
SPN8882T251RG : Tube ; Pb – Free
Package
TO-252
TO-251
Part
Marking
SPN8882
SPN8882
Symbol
G
S
D
Description
Gate
Source
Drain
ABSOULTE MAXIMUM RATINGS
(T
A
=25
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Drain Current
Single Pulse Drain to Source Avalanche Energy
Starting
(T
J
=25°C , V
DD
=27V , V
GS
=10V , I
AS
=28A , L=0.1mH )
TO-252-2L
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
TO-251
T
A
=25℃
T
A
=100℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
E
AS
P
D
T
J
T
STG
R
θJA
Typical
30
±20
60
40
100
50
41
40
55
150
-55/150
100
Unit
V
V
A
A
A
mJ
W
/W
2007/07/20
Ver.2
Page 2