SPN8882
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8882 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. The SPN8882 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low R
DS(ON)
and fast
switching speed.
APPLICATIONS
Power Management in Note book
Powered System
DC/DC Converter
Load Switch
FEATURES
30V/40A,R
DS(ON)
= 10mΩ@V
GS
=10V
30V/40A,R
DS(ON)
= 14mΩ@V
GS
=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252,TO-251 package design
PIN CONFIGURATION
TO-252
TO-251
PART MARKING
2007/07/20
Ver.2
Page 1