SPN8080
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=40V,R
L
=20Ω
I
D
≡37A,V
GEN
=10V
R
G
=3.3Ω
V
DS
=25V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±20V
V
DS
=80V,V
GS
=0V
V
DS
=80V,V
GS
=0V
T
J
= 150 °C
V
DS
≥5V,V
GS
=10V
V
GS
= 10V,I
D
=80A
V
GS
= 6V,I
D
=37A
V
DS
=10V,I
D
=80A
I
S
=40A,V
GS
=0V
80
2.0
4.0
±100
1
250
70
4.0
5.8
150
4.7
8.7
1.5
250
83
62
14500
850
280
V
nA
uA
A
mΩ
S
V
V
DS
=40V,V
GS
=10V
I
D
= 80A
nC
pF
80
37
140
27
nS
2008 / 11 / 25
Ver.1
Page 3