SPN8080
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
ORDERING INFORMATION
Part Number
SPN8080T220TGB
Package
TO-220-3L
Part
Marking
SPN8080
※
SPN8080T220TGB: Tube ; Pb – Free; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Avalanche Current
Power Dissipation
Avalanche Energy with Single Pulse
(
Tj=25℃, ID=30A, VDD=37.5V )
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
AS
P
D
EAS
T
J
T
STG
R
θJA
Typical
80
±20
Unit
V
V
A
A
A
W
mJ
80
15
300
15
62.5
3.38
400
-55/150
-55/150
2
℃
℃
℃/W
2008 / 11 / 25
Ver.1
Page 2