SPN3632
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
100
1.0
V
3.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
VDS=80V,VGS=0V
VDS=80V,VGS=0V
TJ = 150 °C
±100
1
nA
uA
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
250
ID(on)
VDS≥10V,VGS =10V
70
A
VGS= 10V,ID=80A
VGS= 6.0V,ID=30A
VGS= 4.5V,ID=10A
7.5
8.5
8.2
8.5
9.8
10.0
Drain-Source On-Resistance
RDS(on)
mΩ
Forward Transconductance
Diode Forward Voltage
gfs
VDS=15V,ID=20A
IS=30A,VGS =0V
62
S
VSD
1.5
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
230
80
VDS=50V,VGS=10V
ID= 20A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
55
14200
800
220
75
VDS=50VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
VDD=50V,RL=0.6Ω
ID≡20A,VGEN=10V
RG=1.0Ω
40
nS
100
25
td(off)
tf
2009 / 04 / 10 Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
