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SPN3632T220TGB 参数 Datasheet PDF下载

SPN3632T220TGB图片预览
型号: SPN3632T220TGB
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 9 页 / 236 K
品牌: SYNC-POWER [ SYNC POWER CROP. ]
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SPN3632  
N-Channel Enhancement Mode MOSFET  
PIN DESCRIPTION  
Pin  
Symbol  
Description  
1
2
3
G
D
S
Gate  
Drain  
Source  
ORDERING INFORMATION  
Part Number  
Package  
Part Marking  
SPN3632T220TGB  
TO-220-3L  
SPN3632  
SPN3632T220TGB: Tube ; Pb – Free; Halogen – Free  
ABSOULTE MAXIMUM RATINGS  
(TA=25Unless otherwise noted)  
Parameter  
Symbol  
Typical  
Unit  
Drain-Source Voltage  
VDSS  
100  
±20  
V
Gate –Source Voltage  
VGSS  
ID  
V
A
TA=25℃  
Continuous Drain Current(TJ=150)  
TA=70℃  
80  
80  
Pulsed Drain Current  
Avalanche Current  
IDM  
IAS  
240  
60  
A
A
TA=25℃  
62.5  
3.38  
Power Dissipation  
PD  
W
TA=70℃  
Avalanche Energy with Single Pulse  
( Tj=25, L = 0.12mH , IAS = 75A , VDD = 80V. )  
EAS  
335  
mJ  
Operating Junction Temperature  
TJ  
-55/150  
Storage Temperature Range  
TSTG  
-55/150  
2
Thermal Resistance-Junction to Ambient  
RθJA  
/W  
2009 / 04 / 10 Ver.1  
Page 2  
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