SPN1024
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Symbol
Conditions
Min.
Typ
Max. Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID= 250uA
VGS(th) VDS=VGS,ID=250uA
20
V
0.35
1.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
VDS= 20V,VGS=0V
VDS= 20V,VGS=0V
100
1
nA
uA
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
5
TJ=55℃
ID(on)
VDS≥ 4.5V,VGS =5V
0.7
A
VGS=4.5V,ID=0.65A
VGS=2.5V,ID=0.55A
VGS=1.8V,ID=0.45A
0.26
0.32
0.42
0.38
0.45
0.80
Drain-Source On-Resistance
RDS(on)
Ω
Forward Transconductance
Diode Forward Voltage
gfs
VDS=10V,ID=0.4A
IS=0.15A,VGS=0V
1.0
0.8
S
VSD
1.2
1.5
V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
td(on)
tr
1.2
0.2
0.3
5
VDS=10V,VGS=4.5V,
ID≡0.6A
nC
ns
10
15
18
2.8
VDD=10V,RL=10Ω ,
ID≡0.5A
VGEN=4.5V ,RG=6Ω
Turn-On Time
Turn-Off Time
8
td(off)
tf
10
1.2
2007/11/10 Ver.1
Page 3
SYNC-POWER [ SYNC POWER CROP. ]
