SPN1024
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1024 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
N-Channel
20V/0.65A,R
DS(ON)
=380mΩ@V
GS
=4.5V
20V/0.55A,R
DS(ON)
=450mΩ@V
GS
=2.5V
20V/0.45A,R
DS(ON)
=800mΩ@V
GS
=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-563 (SC-89-6L) package design
PIN CONFIGURATION( SOT-563 / SC-89-6L)
PART MARKING
2007/11/10
Ver.1
Page 1