SPC5604
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS ( PMOS )
(T =25℃ Unless otherwise noted)
A
Parameter
Symbol
Conditions
Min.
Typ
Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
(BR)DSS
GS(th)
V
V
V
GS=0V,I
D
=-250uA
-40
V
V
DS=VGS,I
D=-250uA
-0.8
-2.5
Gate Leakage Current
IGSS
DS=0V,VGS=±20V
DS=-32V,VGS=0V
DS=-32V,VGS=0V
±100
-1
nA
uA
V
V
Zero Gate Voltage Drain Current
IDSS
-10
T
J
=85℃
On-State Drain Current
ID(on)
V
DS= -5V,VGS =-4.5V
-10
A
V
V
GS=-10V,I
GS=-4.5V,I
DS=-15V,I
D
=-10A
=- 8A
0.028
0.038
0.032
0.042
Drain-Source On-Resistance
R
DS(on)
Ω
D
Forward Transconductance
Diode Forward Voltage
gfs
V
D=-5.7A
13
S
V
SD
IS
=-2.3A,VGS =0V
-0.8
-1.2
20
V
Dynamic
Total Gate Charge
Qg
13
4.5
6.5
1100
145
115
40
V
DS=-20V,VGS=-4.5V
= -5.0A
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Qgs
nC
pF
ID
Q
gd
iss
oss
rss
d(on)
C
V
DS=-20V,VGS=0V
Output Capacitance
Reverse Transfer Capacitance
C
f=1MHz
C
t
80
100
60
Turn-On Time
Turn-Off Time
V
DD=-20V,R
≡-5.0A,VGEN=-4.5V
=1Ω
L
=4Ω
t
r
55
ID
nS
t
d(off)
30
RG
t
f
12
20
2012/10/22 Ver.2
Page 4
SYNC-POWER [ SYNC POWER CROP. ]
