SPC5604
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC5604 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching, low in-line power loss, and
resistance to transients are needed.
FEATURES
N-Channel
40V/10A,R
DS(ON)
= 24mΩ@V
GS
= 10V
40V/ 8A,R
DS(ON)
= 28mΩ@V
GS
= 4.5V
40V/ 6A,R
DS(ON)
= 32mΩ@V
GS
= 2.5V
P-Channel
-40V/-10A,R
DS(ON)
= 32mΩ@V
GS
=- 10V
-40V/- 8A,R
DS(ON)
= 42mΩ@V
GS
=- 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252-5L package design
APPLICATIONS
Power Management in Note book
Battery Powered System
DC/DC Converter
LCD Display inverter
PIN CONFIGURATION
( TO-252-5L )
( TO-252-4L )
PART MARKING
2012/10/22
Ver.2
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
