欢迎访问ic37.com |
会员登录 免费注册
发布采购

TC6320TG-G 参数 Datasheet PDF下载

TC6320TG-G图片预览
型号: TC6320TG-G
PDF下载: 下载PDF文件 查看货源
内容描述: N-和P-沟道增强型MOSFET双 [N- and P- Channel Enhancement-Mode Dual MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关光电二极管PC
文件页数/大小: 4 页 / 379 K
品牌: SUPERTEX [ Supertex, Inc ]
 浏览型号TC6320TG-G的Datasheet PDF文件第1页浏览型号TC6320TG-G的Datasheet PDF文件第2页浏览型号TC6320TG-G的Datasheet PDF文件第4页  
TC6320  
P- Channel Electrical Characteristics (TJ = 25°C unless otherwise specified)  
Symbol Parameter  
Min  
Typ  
Max  
-
Units  
V
Conditions  
BVDSS  
VGS(th)  
Drain-to-source breakdown voltage  
Gate threshold voltage  
-200  
-
-
-
-
-
-
-
-
VGS = 0V, ID = -2.0µA  
VGS = VDS, ID = -1.0mA  
-1.0  
-2.4  
4.5  
50  
V
ΔVGS(th) Change in VGS(th) with temperature  
-
mV/OC VGS = VDS, ID = -1.0mA  
RGS  
ΔRGS  
VZGS  
Gate-source shunt resistor  
Change in RGS with temperature  
Gate-source zener voltage  
10  
KΩ  
%/OC  
V
IGS = 100µA  
IGS = 100µA  
IGS = -2mA  
-
TBD  
25  
13.2  
ΔVZGS Change in RGS with temperature  
-
-
TBD  
-10  
mV/OC IGS = -2mA  
µA  
VDS = Max rating, VGS = 0V  
IDSS  
Zero gate voltage drain current  
ON-state drain current  
VDS = 0.8 Max Rating,  
VGS = 0V, TA = 125OC  
-
-
-1.0  
mA  
-1.0  
-
-
-
VGS = -4.5V, VDS = -25V  
VGS = -10V, VDS = -25V  
VGS = -4.5V, ID = -150mA  
VGS = -10V, ID = -1.0A  
VGS = -10V, ID =-200mA  
ID(ON)  
A
-2.0  
-
-
-
10  
8.0  
1.0  
-
Static drain-to-source ON-state resis-  
tance  
RDS(ON)  
Ω
-
-
ΔRDS(ON) Change in RDS(ON) with temperature  
-
-
%/OC  
GFS  
CISS  
COSS  
CRSS  
td(ON)  
tr  
Forward transconductance  
Input capacitance  
400  
-
mmho VDS = -25V, ID = -200mA  
-
-
-
-
-
-
-
-
-
-
200  
55  
30  
10  
15  
20  
15  
-1.8  
-
VGS = 0V,  
VDS = -25V,  
f = 1MHz  
Common source output capacitance  
Reverse transfer capacitance  
Turn-ON delay time  
-
pF  
ns  
-
-
VDD = -25V,  
ID = -1.0A,  
RGEN = 25Ω  
Rise time  
-
td(OFF)  
tf  
Turn-OFF delay time  
Fall time  
-
-
-
VSD  
Diode forward voltage drop  
Reverse recovery time  
V
VGS = 0V, ISD = -0.5A  
VGS = 0V, ISD = -0.5A  
trr  
300  
ns  
Notes:  
1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)  
2.All A.C. parameters sample tested.  
P- Channel Switching Waveforms and Test Circuit  
Pulse  
Generator  
0V  
10%  
Input  
RGEN  
90%  
D.U.T  
-10V  
t(ON)  
td(ON)  
t(OFF)  
td(OFF)  
Input  
tr  
tf  
OUTPUT  
0V  
90%  
10%  
90%  
10%  
Output  
VDD  
RL  
VDD  
3