TC6320
P- Channel Electrical Characteristics (TJ = 25°C unless otherwise specified)
Symbol Parameter
Min
Typ
Max
-
Units
V
Conditions
BVDSS
VGS(th)
Drain-to-source breakdown voltage
Gate threshold voltage
-200
-
-
-
-
-
-
-
-
VGS = 0V, ID = -2.0µA
VGS = VDS, ID = -1.0mA
-1.0
-2.4
4.5
50
V
ΔVGS(th) Change in VGS(th) with temperature
-
mV/OC VGS = VDS, ID = -1.0mA
RGS
ΔRGS
VZGS
Gate-source shunt resistor
Change in RGS with temperature
Gate-source zener voltage
10
KΩ
%/OC
V
IGS = 100µA
IGS = 100µA
IGS = -2mA
-
TBD
25
13.2
ΔVZGS Change in RGS with temperature
-
-
TBD
-10
mV/OC IGS = -2mA
µA
VDS = Max rating, VGS = 0V
IDSS
Zero gate voltage drain current
ON-state drain current
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
-
-
-1.0
mA
-1.0
-
-
-
VGS = -4.5V, VDS = -25V
VGS = -10V, VDS = -25V
VGS = -4.5V, ID = -150mA
VGS = -10V, ID = -1.0A
VGS = -10V, ID =-200mA
ID(ON)
A
-2.0
-
-
-
10
8.0
1.0
-
Static drain-to-source ON-state resis-
tance
RDS(ON)
Ω
-
-
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
%/OC
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transconductance
Input capacitance
400
-
mmho VDS = -25V, ID = -200mA
-
-
-
-
-
-
-
-
-
-
200
55
30
10
15
20
15
-1.8
-
VGS = 0V,
VDS = -25V,
f = 1MHz
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
-
pF
ns
-
-
VDD = -25V,
ID = -1.0A,
RGEN = 25Ω
Rise time
-
td(OFF)
tf
Turn-OFF delay time
Fall time
-
-
-
VSD
Diode forward voltage drop
Reverse recovery time
V
VGS = 0V, ISD = -0.5A
VGS = 0V, ISD = -0.5A
trr
300
ns
Notes:
1.All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
P- Channel Switching Waveforms and Test Circuit
Pulse
Generator
0V
10%
Input
RGEN
90%
D.U.T
-10V
t(ON)
td(ON)
t(OFF)
td(OFF)
Input
tr
tf
OUTPUT
0V
90%
10%
90%
10%
Output
VDD
RL
VDD
3
SUPERTEX [ Supertex, Inc ]
