TC6320
N- and P- Channel Enhancement-Mode Dual MOSFET
Features
General Description
The Supertex TC6320 consists of high voltage low
threshold N-channel and P-channel MOSFETs in an SO-
8 package. Both MOSFETs have integrated gate-source
resistors and gate-source zener diode clamps which are
desired for high voltage pulser applications. The TC6320 is
a complimentary, high-speed, high voltage, gate-clamped
N- and P-channel MOSFET pair in an SO-8 package.
These low threshold enhancement-mode (normally-off)
transistors utilize an advanced vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces devices with the
power handling capabilities of bipolar transistors and
with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of
all MOS structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
► Low threshold
► Low on resistance
► Low input capacitance
► Fast switching speeds
► Freedom from secondary breakdown
► Low input and output leakage
► Independent, electrically isolated N- and P-
channels
Applications
► Medical ultrasound transmitters
► High voltage pulsers
► Amplifiers
► Buffers
► Piezoelectric transducer drivers
► General purpose line drivers
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Package Options
BVDSS/BVDGS
RDS(ON) (MAX)
Device
8-Lead SOIC (Narrow Body)
N-Channel
200V
P-Channel
N-Channel
P-Channel
-200V
7.0Ω
8.0Ω
TC6320
TC6320TG
TC6320TG-G
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
Absolute Maximum Ratings
Parameter
Value
N-Channel
Drain to source voltage
BVDSS
BVDGS
Drain to gate voltage
Operating and storage temperature
Soldering temperature1
-55°C to +150°C
+300°C
P-Channel
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
SO-8 Package
(top view)
Note 1. Distance of 1.6mm from case for 10 seconds.