HV300/HV310
Electrical Characteristics
(V
Symbol
Parameters
IN
=-10V to -90V, -40°C
≤
T
A
≤
+85°C unless otherwise noted)
Min
Typ
Max
Unit
Conditions
Supply
V
EE
I
EE
I
EE
(Referenced to V
DD
pin)
Supply Voltage
Supply Current
Standby Mode Supply Current
(Referenced to V
EE
pin)
1.26
1.16
100
1.0
1.26
1.16
100
1.0
V
V
mV
nA
V
V
mV
nA
Low to High Transition
High to Low Transition
V
UV
= V
EE
+ 1.9V
Low to High Transition
High to Low Transition
V
OV
= V
EE
+ 0.5V
-90
550
330
-10
650
400
V
µA
µA
V
EE
= -48V, Mode = Limiting
V
EE
= -48V, Mode = Standby
OV and UV Control
V
UVH
V
UVL
V
UVHY
I
UV
V
OVH
V
OVL
V
OVHY
I
OV
UV High Threshold
UV Low Threshold
UV Hysteresis
UV Input Current
OV High Threshold
OV Low Threshold
OV Hysteresis
OV Input Current
(Referenced to V
EE
pin)
40
Current Limit
V
SENSE
Current Limit Threshold Voltage
50
60
mV
V
UV
= V
EE
+ 1.9V,
V
OV
= V
EE
+ 0.5V
Gate Drive Output
V
GATE
I
GATEUP
(Referenced to V
EE
pin)
9.0
500
10
11
V
µA
V
UV
= V
EE
+ 1.9V,
V
OV
= V
EE
+ 0.5V
V
UV
= V
EE
+ 1.9V,
V
OV
= V
EE
+ 0.5V,
V
UV
= V
EE
, V
OV
= V
EE
+ 0.5V
Maximum Gate Drive Voltage
Gate Drive Pull-Up Current
I
GATEDOWN
Gate Drive Pull-Down Current
40
mA
Timing Control –
I
RAMP
t
POR
t
RISE
t
LIMIT
t
PWRGD
V
RAMP
Test Conditions: C =100µF, C
RAMP
=10nF, V
UV
= V
EE
+1.9V, V
OV
= V
EE
+0.5V, External MOSFET is IRF530*
Ramp Pin Output Current
Time from UV to Gate Turn On
Time from Gate Turn On to V
SENSE
Limit
Duration of Current Limit Mode
Time from Current Limit to PWRGD
Voltage on Ramp Pin in Current Limit Mode
10
2.0
400
5.0
5.0
3.6
µA
ms
µs
ms
ms
V
V
SENSE
= 0V
(Note 1)
(Note 2)
Power Good Output
V
PWRGD
V
PWRGD
(Referenced to V
EE
pin)
90
0.5
0.8
V
V
I
PWRGD
= 1mA
Power Good Pin Breakdown Voltage
Power Good Pin Output Low Voltage
Dynamic Characterstics
t
GATEHLOV
t
GATEHLUV
OV Delay
UV Delay
500
500
ns
ns
Note 1: This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this timing.
Note 2: This voltage depends on the characteristics of the external N-Channel MOSFET.
*IRF530 is a registered trademark of International Rectifier.
V
GS(th)
= 3V for an IRF530.
2
SUPERTEX [ Supertex, Inc ]
