HV257
Typical Characteristics
I
SINK vs
R
SINK
(V
PP
= 300V, V
DD
= 6.5V, V
NN
= 5.5V, T
A
= 25 C)
O
I
SOURCE vs
R
SOURCE
(V
PP
= 300V, V
DD
= 6.5V, V
NN
= 5.5V, T
A
= 25
O
C)
600
600
500
500
I
SOURCE
(µA)
max
400
400
I
SINK
(µA)
300
300
200
200
100
100
max
min
min
0
25k
150k
250k
0
25k
150k
250k
R
SINK
(KΩ)
R
SOURCE
(KΩ)
Temperature Diode vs Temperature
(V
PP
= 300V, V
DD
= 6.5V, V
NN
= 5.5V)
O
Acquisition Window
(”one RC” response to one volt input step)
(V
PP
= 300V, V
DD
= 6.5V, V
NN
= 5.5V, T
A
= 25 C)
120
700
-10
O
C
max
100
One RC (nsec)
80
+85
O
C
+25
O
C
-10
O
C
600
max
min
25
O
C
V
f
(mV)
60
min
500
max
min
400
85
O
C
40
20
300
0
1μA
20μA
40μA
60μA
80μA
100μA
1
2
4
V
SIG
Level (V)
Diode Biasing Current (µA)
HV
OUT
Charge Injection vs V
SIG
(V
PP
= 300V, V
DD
= 6.5V, V
NN
= 5.5V, T
A
= 25
O
C)
HV
OUT
Droop
(V
PP
= 300V, V
DD
= 6.5V, V
NN
= 5.5V)
3
40
2
20
HV
OUT
(mV)
HV
OUT
(V/sec)
1
0
-20
0
25
O
C
-40
0v
1v
2v
3v
4v
-1
85
O
C
-10
O
C
V
SIG
Level (V)
-2
0
150
280
HV
OUT
Level (V)
7
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