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DN3145ND 参数 Datasheet PDF下载

DN3145ND图片预览
型号: DN3145ND
PDF下载: 下载PDF文件 查看货源
内容描述: [N-CHANNEL, Si, SMALL SIGNAL, MOSFET]
分类和应用: 开关晶体管
文件页数/大小: 4 页 / 71 K
品牌: SUPERTEX [ Supertex, Inc ]
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DN3125
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSX
V
GS(OFF)
∆V
GS(OFF)
I
GSS
I
D(OFF)
Parameter
Drain-to-Souce Breakdown Voltage
Gate-to-Source OFF Voltage
Change in V
GS(OFF)
with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
Min
250
-1.5
-3.5
4.5
100
1.0
1.0
I
DSS
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Saturated Drain-to-Source Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
800
150
60
6.0
3.0
120
15
10
10
15
15
20
1.8
V
ns
ns
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25Ω,
V
GS
= 0V to -10V
V
GS
= -5.0V, I
SD
= 150mA
V
GS
= -5.0V, I
SD
= 150mA
pF
V
GS
= -5.0V, V
DS
= 25V,
f =1.0Mhz
200
20
20
1.1
Typ
Max
Unit
V
V
mV/°C
nA
µA
mA
mA
%/°C
mm
Conditions
V
GS
= -5.0V, I
D
= 100µA
V
DS
= 15V, I
D
= 10µA
V
DS
= 15V, I
D
= 10µA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= -5.0V, V
DS
= Max Rating
V
GS
= -5.0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 0V, V
DS
= 15V
V
GS
= 0V, I
D
= 150mA
V
GS
= -0.8V, I
D
= 50mA
V
GS
= 0V, I
D
= 150mA
I
D
= 100mA, V
DS
=10V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
90%
INPUT
-10V
10%
t
(ON)
t
d(ON)
V
DD
OUTPUT
0V
90%
90%
t
r
t
(OFF)
t
d(OFF)
t
F
PULSE
GENERATOR
R
gen
V
DD
R
L
OUTPUT
D.U.T.
10%
10%
INPUT
03/03/99
2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com