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DN2625K4-G 参数 Datasheet PDF下载

DN2625K4-G图片预览
型号: DN2625K4-G
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道耗尽型垂直DMOS场效应管 [N-Channel Depletion-Mode Vertical DMOS FETs]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲
文件页数/大小: 7 页 / 882 K
品牌: SUPERTEX [ Supertex, Inc ]
 浏览型号DN2625K4-G的Datasheet PDF文件第1页浏览型号DN2625K4-G的Datasheet PDF文件第2页浏览型号DN2625K4-G的Datasheet PDF文件第4页浏览型号DN2625K4-G的Datasheet PDF文件第5页浏览型号DN2625K4-G的Datasheet PDF文件第6页浏览型号DN2625K4-G的Datasheet PDF文件第7页  
DN2625  
Electrical Characteristics (cont) @25OC unless otherwise specified  
Symbol Parameter  
Min  
Typ  
Max  
100  
1.0  
Units Conditions  
IGSS  
ID(OFF)  
IDSS  
Gate body leakage current  
-
-
-
-
nA  
µA  
VGS = 20V, VDS = 0V  
VDS = 250V, VGS = -5.0V  
Drain-to-source leakage current  
Saturated drain-to-source current  
VDS = 250V, VGS = -5.0V,  
TA = 125OC  
-
-
-
200  
µA  
A
1.1  
3.1  
-
-
VGS = 0V, VDS = 15V  
VGS = 0.9V, VDS = 15V with duty  
cycle of 1%  
IDS(PULSE) Pulsed drain-to-source current  
RDS(ON) Static drain-to-source ON resistance  
ΔRDS(ON) Change in RDS(ON) with temperature  
3.3  
A
-
-
3.5  
1.1  
-
Ω
VGS = 0V, ID = 1.0A  
-
-
%/OC  
VGS = 0V, ID = 200mA  
GFS  
CISS  
COSS  
CRSS  
td(ON)  
tr  
Forward transconductance  
Input capacitance  
1.0  
-
mmho VDS = 10V, ID = 150mA  
-
-
-
-
-
-
-
-
800  
1000  
210  
70  
VGS = -2.5V,  
VDS = 25V,  
f = 1.0MHz  
Common source output capacitance  
Reverse transfer capacitance  
Turn-ON delay time  
70  
18  
-
pF  
10  
VDD = 25V,  
Rise time  
-
20  
ID = 150mA,  
RGEN = 3.0Ω,  
VGS = 0v to -10V  
ns  
V
td(OFF)  
tf  
Turn-OFF delay time  
Fall time  
-
10  
-
20  
VSD  
Diode forward voltage drop  
-
1.8  
VGS = -2.5V, ISD = 150mA  
Typical Performance Curves  
Output Characteristics  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 2.0V  
VGS = 1.5V  
VGS = 1.0V  
VGS = 0.5V  
VGS = 0V  
VGS = -0.5V  
VGS = -1.0V  
VGS = -1.5V  
VGS = -2.0V  
0.0  
0
50  
100  
150  
200  
250  
V
DS (V)  
3