欢迎访问ic37.com |
会员登录 免费注册
发布采购

DN2625K4-G 参数 Datasheet PDF下载

DN2625K4-G图片预览
型号: DN2625K4-G
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道耗尽型垂直DMOS场效应管 [N-Channel Depletion-Mode Vertical DMOS FETs]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲
文件页数/大小: 7 页 / 882 K
品牌: SUPERTEX [ Supertex, Inc ]
 浏览型号DN2625K4-G的Datasheet PDF文件第1页浏览型号DN2625K4-G的Datasheet PDF文件第3页浏览型号DN2625K4-G的Datasheet PDF文件第4页浏览型号DN2625K4-G的Datasheet PDF文件第5页浏览型号DN2625K4-G的Datasheet PDF文件第6页浏览型号DN2625K4-G的Datasheet PDF文件第7页  
DN2625  
Ordering Information  
Package Options  
BVDSX  
/
IDS  
VGS(OFF)  
(VGS=0.9V)  
BVDGX  
Device  
TO-252  
14-Lead QFN  
(max V)  
5x5mm body,  
(min A)  
(V)  
(D-PAK)  
1.0mm height (max), 1.27mm pitch  
DN2625  
DN2625K4-G  
DN2625K6-G  
250  
-2.1  
3.3  
-G indicates package is RoHS compliant (‘Green’)  
Pin Configurations  
Drain  
DRAIN DRAIN DRAIN  
14 13 12  
GATE  
SOURCE  
SOURCE  
SOURCE  
GATE  
11  
1
2
10 SOURCE  
3
4
9
SOURCE  
Absolute Maximum Ratings  
Parameter  
Value  
250V  
250V  
20V  
8
SOURCE  
5
6
7
Drain-to-source voltage  
Drain-to-gate voltage  
Gate  
Source  
DRAIN DRAIN DRAIN  
14-Lead QFN  
TO-252 D-PAK  
(top view)  
(top view)  
Gate-to-source voltage  
Operating and storage temperature  
Soldering temperature*  
-55OC to +150OC  
300OC  
Product Marking  
Absolute Maximum Ratings are those values beyond which damage to  
the device may occur. Functional operation under these conditions is not  
implied. Continuous operation of the device at the absolute rating level  
may affect device reliability. All voltages are referenced to device ground.  
YY = Year Sealed  
WW = Week Sealed  
L = Lot Number  
YYWW  
DN2625  
LLLLLLL  
= “Green” Packaging  
*Distance of 1.6mm from case for 10 seconds.  
TO-252 D-PAK  
L = Lot Number  
DN2625  
LLLLLL  
YYWW  
YY = Year Sealed  
WW = Week Sealed  
A = Assembler ID  
C = Country of Origin  
AAACCC  
= “Green” Packaging  
14-Lead QFN  
Electrical Characteristics @25OC unless otherwise specified  
Symbol Parameter  
Min  
250  
250  
-1.5  
-
Typ  
Max  
Units Conditions  
BVDSX  
BVDGX  
Drain-to-source breakdown voltage  
Drain-to-gate breakdown voltage  
-
-
-
-
-
V
V
V
VGS = -2.5V, ID = 50µA  
-
VGS = -2.5V, ID = 50µA  
VGS(OFF) Gate-to-source OFF voltage  
-2.1  
4.5  
VDS = 15V, ID = 100µA  
ΔVGS(OFF) Change in VGS(OFF) with temperature  
mV/OC VDS = 15V, ID = 100µA  
2