2N7000
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
5.0
1.1
4.0
On-Resistance vs. Drain Current
V
GS
= 4.5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
3.0
V
GS
= 10V
1.0
2.0
1.0
0.9
0
-50
0
50
100
150
0
0.5
1.0
1.5
2.0
2.5
T
j
( C)
Transfer Characteristics
2.5
1.6
O
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.9
V
DS
= 25V
2.0
25 C
O
V
GS(th)
(normalized)
1.5
1.2
1.3
125 C
1.0
O
V
(th)
@ 1mA
1.0
1.0
0.5
0.8
0.7
0
0
2
4
6
8
10
0.6
-50
0
50
100
0.4
150
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
10
T
j
( C)
Gate Drive Dynamic Characteristics
O
f = 1MHz
8
75
V
DS
= 10V
40V
C (picofarads)
V
GS
(volts)
6
50
80 pF
4
C
ISS
25
C
OSS
C
RSS
2
40 pF
0
40
0
0.2
0.4
0.6
0.8
1.0
0
0
10
20
30
V
DS
(volts)
Q
G
(nanocoulombs)
4
R
DS(ON)
(normalized)
T
A
= -55 C
O
1.4
1.6
R
DS
@ 10V, 1.0A
I
D
(amperes)
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