2N7000
Electrical Characteristics
(T = 25°C unless otherwise specified)
A
Symbol
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Gate body leakage current
Zero gate voltage drain current
ON-state drain current
Static drain-to-source
ON-state resistance
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON time
Turn-OFF time
Diode forward voltage drop
Min
60
0.8
-
-
-
75
-
-
100
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.85
Max
-
3.0
10
1.0
1.0
-
5.3
5.0
-
60
25
5
10
10
-
Units
V
V
nA
µA
mA
mA
Ω
mmho
Conditions
V
GS
= 0V, I
D
= 10µA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ±15V, V
DS
= 0V
V
GS
= 0V, V
DS
= 48V
V
GS
= 0V, V
DS
= 48V,
T
A
= 125
O
C
V
GS
= 4.5V, V
DS
= 10V
V
GS
= 4.5V, I
D
= 75mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 10V, I
D
= 200mA
V
GS
= 0V, V
DS
= 25V,
f = 1.0MHz
V
DD
= 15V, I
D
= 500mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 200mA
pF
ns
V
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Thermal Characteristics
Device
2N7000
Package
TO-92
I
D
(continuous)
*
(mA)
I
D
(pulsed)
(mA)
Power Dissipation
@T
C
= 25
O
C
(W)
( C/W)
O
θ
JC
( C/W)
O
θ
JA
I
DR*
(mA)
I
DRM
(mA)
200
500
1.0
125
170
200
500
Notes:
* I
D
(continuous) is limited by max rated T
J
.
Switching Waveforms and Test Circuit
10V
V
DD
R
L
OUTPUT
90%
INPUT
0V
10%
t
(ON)
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
R
GEN
t
d(ON)
V
DD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
2
SUPERTEX [ Supertex, Inc ]
