2N7000
Electrical Characteristics (TA = 25°C unless otherwise specified)
Symbol Parameter
Min
60
0.8
-
Typ
Max
-
Units Conditions
BVDSS
VGS(th)
IGSS
Drain-to-source breakdown voltage
-
-
-
-
V
V
VGS = 0V, ID = 10µA
VGS = VDS, ID = 1.0mA
Gate threshold voltage
±.0
10
Gate body leakage current
nA
µA
VGS = ±15V, VDS = 0V
VGS = 0V, VDS = 48V
-
1.0
IDSS
Zero gate voltage drain current
VGS = 0V, VDS = 48V,
TA = 125OC
-
-
1.0
mA
mA
ID(ON)
ON-state drain current
75
-
-
5.±
5.0
-
VGS = 4.5V, VDS = 10V
VGS = 4.5V, ID = 75mA
VGS = 10V, ID = 500mA
-
-
Static drain-to-source
ON-state resistance
RDS(ON)
Ω
-
-
GFS
CISS
COSS
CRSS
t(ON)
Forward transconductance
Input capacitance
100
-
mmho VDS = 10V, ID = 200mA
VGS = 0V, V = 25V,
-
-
-
-
-
-
-
60
25
5
f = 1.0MHzDS
pF
Common source output capacitance
Reverse transfer capacitance
Turn-ON time
-
-
-
-
10
10
-
VDD = 15V, I = 500mA,
RGEN = 25ΩD
ns
t(OFF)
Turn-OFF time
VSD
Diode forward voltage drop
0.85
V
VGS = 0V, ISD = 200mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Thermal Characteristics
ID
ID
Power Dissipation
*
θJC
IDR
IDRM
θJA
O
(continuous)* (pulsed)
@T = 25 C
Device
Package
(OC/W)
(OC/W)
(mA)
(mA)
(mA)
(mA)
C(W)
2N7000
TO-92
200
500
1.0
125
170
200
500
Notes:
* ID (continuous) is limited by max rated TJ.
Switching Waveforms and Test Circuit
VDD
10V
90%
RL
INPUT
PULSE
GENERATOR
10%
0V
OUTPUT
t(ON)
td(ON)
t(OFF)
td(OFF)
RGEN
tr
tF
VDD
0V
D.U.T.
10%
10%
INPUT
OUTPUT
90%
90%
2
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