IRF630
P
OWER
MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25
.
CIRF630
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250 A)
Drain-Source Leakage Current
(V
DS
= 200V, V
GS
= 0 V)
(V
DS
= 160V, V
GS
= 0 V, T
J
= 125 )
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= -20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 A)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 5.4A) (Note 4)
Forward Transconductance (V
DS
= 50V, I
D
= 5.4 A) (Note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(V
DS
= 160V, I
D
= 5.9A
V
GS
= 10 V) (Note 4)
(V
DD
= 100 V, I
D
= 5.9 A,
R
G
= 12 , R
D
= 16 ) (Note 4)
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
Symbol
V
(BR)DSS
I
DSS
25
250
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
4.5
7.5
3.8
800
240
76
9.4
28
39
20
43
7.0
23
2.0
100
-100
4.0
0.40
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
nA
nA
V
Min
200
Typ
Max
Units
V
A
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Forward Turn-On Time
Reverse Recovery Time
Diode Forward Voltage
I
F
= 5.9A, di/dt = 100A/µs , T
J
= 25
(Note 4)
I
S
= 9.0A, V
GS
= 0 V, T
J
= 25
(Note 4)
Q
rr
t
on
t
rr
V
SD
1.1
**
170
2.2
340
2.0
µC
ns
V
Note
(1) Repetitive rating; pulse width limited by max. junction temperature
(2) V
DD
= 50V, starting T
J
= 25 , L=4.6mH, R
G
= 25 , I
AS
= 9.0A
(3) I
SD
9.0A, di/dt
120A/µs, V
DD
V
(BR)DSS
, T
J
150
(4) Pulse Test: Pulse Width 300µs, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
Page 2
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