IRF630
P
OWER
MOSFET
GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, converters, solenoid and relay drivers.
FEATURES
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
PIN CONFIGURATION
TO-220
SYMBOL
D
Top View
G ATE
SO URCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ORDERING INFORMATION
Part Number
Package
.....................IRF630................................................TO-220
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
Continuous
Pulsed (Note 1)
Gate-to-Source Voltage
Total Power Dissipation
Derate above 25
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Operating and Storage Temperature Range
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
E
AS
I
AR
E
AR
dv/dt
T
J
, T
STG
JC
JA
Symbol
I
D
I
DM
V
GS
P
D
Value
9.0
36
±20
74
0.59
9.0
7.4
5.0
-55 to 150
1.70
62
300
Unit
A
V
W
W/
A
mJ
V/ns
/W
Continue
250................mJ
T
L
Page 1
SUNTAC [ SUNTAC ELECTRONIC CORP. ]
