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BTB12 参数 Datasheet PDF下载

BTB12图片预览
型号: BTB12
PDF下载: 下载PDF文件 查看货源
内容描述: 12A双向可控硅逻辑电平 [12A Triacs logic level]
分类和应用: 可控硅三端双向交流开关局域网
文件页数/大小: 4 页 / 74 K
品牌: SUNTAC [ SUNTAC ELECTRONIC CORP. ]
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12A Triacs logic level
Fig. 4:
values).
ITM (A)
100
130
120
110
100
90
80
70
60
50
40
30
20
10
0
BTA/BTB12 series
On-state characteristics (maximum
Fig. 5:
Surge peak on-state current versus
number of cycles.
ITSM (A)
t=20ms
Tj max
Non repetitive
Tj initial=25°C
One cycle
10
Tj=25°C
Tj max.
Vto = 0.85 V
Rd = 35 mΩ
Repetitive
Tc=90°C
VTM(V)
Number of cycles
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
1000
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
1000
dI/dt limitation:
50A/µs
Tj initial=25°C
Fig. 7:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
IGT
ITSM
1.5
100
I²t
IH & IL
1.0
0.5
Tj(°C)
tp (ms)
10
0.01
0.10
1.00
10.00
0.0
-40
-20
0
20
40
60
80
100
120
140
Fig. 8-1:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (BW/CW/T1235).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.8
2.4
2.0
C
SW
Fig. 8-2:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (TW).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
5.0
4.5
4.0
3.5
3.0
2.5
TW
1.6
1.2
0.8
0.4
B
BW/CW/T1235
2.0
1.5
1.0
0.5
(dV/dt)c (V/µs)
(dV/dt)c (V/µs)
1.0
10.0
100.0
0.0
0.1
1.0
10.0
100.0
0.0
0.1
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