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BTB12 参数 Datasheet PDF下载

BTB12图片预览
型号: BTB12
PDF下载: 下载PDF文件 查看货源
内容描述: 12A双向可控硅逻辑电平 [12A Triacs logic level]
分类和应用: 可控硅三端双向交流开关局域网
文件页数/大小: 4 页 / 74 K
品牌: SUNTAC [ SUNTAC ELECTRONIC CORP. ]
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BTA/BTB12 series
12A Triacs logic level
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
T12
T1235
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= 12 V
R
L
= 30
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
I - III
II
V
D
= 67 %V
DRM
gate open
Tj = 125°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
(dV/dt)c = 10 V/µs
Without snubber
MIN.
MIN.
MAX.
35
50
60
500
-
-
6.5
10
10
15
20
3.5
1
-
35
TW
5
SW
10
1.3
0.2
15
25
30
40
6.5
2.9
-
35
50
60
500
-
-
6.5
50
70
80
1000
-
-
12
V/µs
A/ms
BTA/BTB12
CW
35
BW
50
mA
V
V
mA
mA
Unit
V
D
= V
DRM
R
L
= 3.3 kΩ
Tj = 125°C
I
T
= 100 mA
I
G
= 1.2 I
GT
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs
STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB12
C
I
GT
(1)
V
D
= 12 V
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= V
DRM
R
L
= 3.3 kΩ Tj = 125°C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open Tj = 125°C
Tj = 125°C
I - III - IV
II
MIN.
MIN.
(dV/dt)c (2) (dI/dt)c = 5.3 A/ms
R
L
= 30
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
25
40
80
200
5
25
50
1.3
0.2
50
50
100
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
Unit
STATIC CHARACTERISTICS
Symbol
V
T
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 17 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
35
5
1
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
2/4