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S93WD662S-AT 参数 Datasheet PDF下载

S93WD662S-AT图片预览
型号: S93WD662S-AT
PDF下载: 下载PDF文件 查看货源
内容描述: 精密电源电压监控和复位控制器,一个看门狗定时器和4K位微丝记忆 [Precision Supply-Voltage Monitor and Reset Controller With a Watchdog Timer and 4k-bit Microwire Memory]
分类和应用: 监控控制器
文件页数/大小: 14 页 / 147 K
品牌: SUMMIT [ SUMMIT MICROELECTRONICS, INC. ]
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S93WD662/S93WD663  
The ready/busy status can be determined after the start  
of a write operation by selecting the device (CS high)  
and polling the DO pin; DO low indicates that the write  
operationisnotcompleted, whileDOhighindicatesthat  
the device is ready for the next instruction. See the  
Applications Aid section for detailed use of the ready  
busy status.  
databitswilltoggleontherisingedgeoftheSKclockand  
are stable after the specified time delay  
(tPD0 or tPD1).  
Write  
After receiving a WRITE command, address and the  
data, the CS (Chip Select) pin must be deselected for a  
minimum of 250ns (tCSMIN). The falling edge of CS will  
start automatic erase and write cycle to the memory  
location specified in the instruction. The ready/busy  
status of the S93WD662/WD663 can be determined by  
selecting the device and polling the DO pin.  
The format for all instructions is: one start bit; two op  
code bits and either eight (x16) or nine (x8) address or  
instruction bits.  
Read  
Upon receiving a READ command and an address  
(clocked into the DI pin), the DO pin of the S93WD662/  
WD663 will come out of the high impedance state and,  
will first output an initial dummy zero bit, then begin  
shifting out the data addressed (MSB first). The output  
Erase  
Upon receiving an ERASE command and address, the  
CS (Chip Select) pin must be deselected for a minimum  
of 250ns (tCSMIN). The falling edge of CS will start the  
auto erase cycle of the selected memory location. The  
ready/busy status of the S93WD662/WD663 can be  
t
t
t
SKLOW  
CSH  
SKHI  
SK  
t
t
DIH  
DIS  
VALID  
VALID  
DI  
t
CSS  
CS  
t
t
t
t
CSMIN  
DIS  
PD0, PD1  
DO  
DATAVALID  
2013 ILL 3 1.0  
Figure 1. Sychronous Data Timing  
SK  
t
CS  
CS  
DI  
STANDBY  
A
N
A
N1  
A
0
1
1
0
t
HZ  
t
HIGH-Z  
HIGH-Z  
PD0  
DO  
0
D
N
D
N1  
D
1
D
0
2013 ILL4 1.0  
Figure 2. Read Instruction Timing  
2013 2.1 8/2/00  
3
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