TN25 and TYNx25 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Value
Unit
I
MIN.
MAX.
MAX.
4
GT
mA
40
1.3
V
V
= 12 V
R = 33 Ω
D
L
V
V
V
GT
V
Tj = 125°C
MIN.
= V
R = 3.3 kΩ
0.2
50
GD
D
DRM
L
I
I = 500 mA Gate open
MAX.
MAX.
MIN.
mA
mA
V/µs
V
H
T
I
I
= 1.2 I
GT
90
L
G
V
I
= 67 % V
Gate open
dV/dt
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1000
1.6
0.77
14
D
DRM
V
= 50 A tp = 380 µs
MAX.
MAX.
MAX.
MAX.
TM
TM
V
Threshold voltage
V
t0
R
Dynamic resistance
mΩ
µA
mA
d
I
I
5
DRM
V
= V
RRM
DRM
4
RRM
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
Junction to case (DC)
Junction to ambient (DC)
°C/W
°C/W
1.0
60
45
th(j-c)
th(j-a)
R
TO-220AB
²
²
S = 1 cm
D PAK
S = Copper surface under tab
PRODUCT SELECTOR
Voltage (xxx)
Part Number
Sensitivity
Package
600 V
800 V
1000 V
²
TN2540-xxxG
TYNx25
X
X
X
X
X
X
40 mA
40 mA
D PAK
TO-220AB
2/7
STMICROELECTRONICS [ ST ]
