TLC116 T/D/S/A ---> TLC386 T/D/S/A
THERMAL RESISTANCES
Symbol
Parameter
Value
50
Unit
°C/W
°C/W
°C/W
2
Rth (j-a)
Junction to ambient on printed circuit with Cu surface 1cm
Rth (j-l) DC Junction leads for DC
20
Rth (j-l) AC Junction leads for 360° conduction angle ( F= 50 Hz)
15
GATE CHARACTERISTICS (maximum values)
P
= 0.1W
P
GM
= 2W (tp = 20 µs)
I
= 1A (tp = 20 µs)
V = 16V (tp = 20 µs).
GM
G (AV)
GM
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
Unit
T
5
5
D
5
S
A
I
V =12V (DC) R =33Ω
Tj=25°C
I-II-III
IV
MAX
MAX
MAX
MIN
10
10
10
25
mA
GT
D
L
10
V
V =12V (DC) R =33Ω
Tj=25°C
Tj=110°C
Tj=25°C
I-II-III-IV
I-II-III-IV
I-II-III-IV
1.5
0.2
2
V
V
GT
D
L
V
V =V
R =3.3kΩ
L
GD
D
DRM
DRM
tgt
V =V
I
G
= 40mA
TYP
µs
D
dI /dt = 0.5A/µs
G
I
IG= 1.2 I
Tj=25°C
I-III-IV
II
MAX
15
15
15
15
15
15
25
25
25
25
25
25
mA
L
GT
I
*
I = 100mA gate open
Tj=25 C
MAX
MAX
MAX
MAX
TYP
mA
V
°
H
T
V
I
*
I
= 4A tp= 380µs
TM
Tj=25°C
1.85
0.01
0.75
TM
V
V
Rated
Rated
Tj=25 C
mA
°
DRM
RRM
DRM
RRM
I
Tj=110°C
dV/dt *
Linear
slope
up
to
Tj=110 C
10
1
10
1
20
5
20
5
V/ s
µ
°
V =67%V
D
DRM
gate open
(dV/dt)c *
(dI/dt)c = 1.3A/ms
Tj=110°C
TYP
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
2/5
STMICROELECTRONICS [ ST ]
