T4 Series
Table 3: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
IPAK/DPAK/
TO-220AB
Tc = 110°C
Tc = 105°C
RMS on-state current (full sine
wave)
IT(RMS)
4
A
ISOWATT220AB
F = 50 Hz
t = 20 ms
30
31
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
ITSM
A
F = 60 Hz
t = 16.7 ms
²
²
²
tp = 10 ms
5.1
I t
I t Value for fusing
A s
Critical rate of rise of on-state cur-
Tj = 125°C
dI/dt
F = 120 Hz
tp = 20 µs
50
A/µs
rent IG = 2 x IGT , tr ≤ 100 ns
IGM
Tj = 125°C
Tj = 125°C
Peak gate current
4
1
A
PG(AV)
Average gate power dissipation
W
Tstg
Tj
- 40 to + 150
- 40 to + 125
Storage junction temperature range
Operating junction temperature range
°C
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
T4
Symbol
Test Conditions
Quadrant
Unit
T405
T410
10
T435
IGT (1)
I - II - III
I - II - III
MAX.
MAX.
5
35
mA
V
VD = 12 V RL = 30 Ω
VGT
1.3
VD = VDRM RL = 3.3 kΩ
Tj = 125°C
VGD
I - II - III
MIN.
0.2
V
IH (2)
IT = 100 mA
MAX.
10
10
15
15
25
30
35
50
60
mA
I - III
II
IL
IG = 1.2 IGT
MAX.
MIN.
mA
VD = 67 %VDRM gate open
Tj = 125°C
dV/dt (2)
20
40
400
V/µs
(dV/dt)c = 0.1 V/µs Tj = 125°C
(dV/dt)c = 10 V/µs Tj = 125°C
1.8
0.9
-
2.7
2.0
-
-
-
(dI/dt)c (2)
MIN.
A/ms
Without snubber
Tj = 125°C
2.5
Note 1: minimum I
is guaranted at 5% of I
max.
GT
GT
Note 2: for both polarities of A2 referenced to A1.
2/10
STMICROELECTRONICS [ ST ]
