Characteristics
STTH8R06
Figure 7.
Q
rr
(nC)
350
V
R
=400V
T
j
=125°C
Reverse recovery charges
versus dI
F
/dt (typical values)
Figure 8.
S factor
0.70
0.65
0.60
I
F
≤
2 x I
F(AV)
V
R
=400V
T
j
=125°C
Softness factor versus
dI
F
/dt (typical values)
300
I
F
=2 x I
F(AV)
250
I
F
=I
F(AV)
0.55
0.50
0.45
200
I
F
=0.5 x I
F(AV)
0.40
0.35
0.30
150
100
50
0.25
0.20
dI
F
/dt(A/µs)
0
0
200
400
600
800
1000
0.15
0.10
0
200
dI
F
/dt(A/µs)
400
600
800
1000
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
Figure 10. Transient peak forward voltage
versus dI
F
/dt (typical values)
V
FP
(V)
12
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
50
75
100
125
I
RM
S factor
I
F
=I
F(AV)
V
R
=400V
Reference: T
j
=125°C
11
10
9
8
7
6
5
4
I
F
=I
F(AV)
T
j
=125°C
Q
RR
3
2
T
j
(°C)
1
0
0
100
dI
F
/dt(A/µs)
200
300
400
500
4/12
STMICROELECTRONICS [ STMICROELECTRONICS ]
