STTH8R06
Characteristics
Figure 1.
P(W)
24
22
20
18
16
14
12
10
8
6
4
2
0
0
Conduction losses versus
average current
Figure 2.
I
FM
(A)
100
Forward voltage drop versus
forward current
δ
= 0.05
δ
= 0.1
δ
= 0.2
90
δ
= 0.5
T
j
=125°C
(maximum values)
80
70
δ
=1
T
j
=125°C
(typical values)
60
50
40
30
T
j
= 25°C
(maximum values)
T
20
10
I
F(AV)
(A)
2
4
6
δ
=tp/T
8
tp
0
10
0
1
2
3
V
FM
(V)
4
5
6
7
Figure 3.
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AC, I
2
PAK,
D
2
PAK)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Relative variation of thermal
impedance junction to case versus
pulse duration
(TO-220FPAC Insulated)
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
1.E-01
Single pulse
Z
th(j-c)
/R
th(j-c)
0.3
T
T
0.2
0.1
Single pulse
t
p
(s)
δ
=tp/T
tp
0.0
1.E+00
1.E-03
1.E-02
t
p
(s)
1.E-01
δ
=tp/T
1.E+00
tp
1.E+01
Figure 5.
I
RM
(A)
22
20
18
16
14
12
10
V
R
=400V
T
j
=125°C
Peak reverse recovery current
versus dI
F
/dt (typical values)
Figure 6.
t
rr
(ns)
120
Reverse recovery time versus
dI
F
/dt (typical values)
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
110
100
I
F
=I
F(AV)
90
80
I
F
=0.5 x I
F(AV)
70
60
I
F
=2 x I
F(AV)
I
F
=I
F(AV)
I
F
=0.5 x I
F(AV)
I
F
=0.25 x I
F(AV)
50
40
30
20
8
6
4
2
0
0
200
400
600
800
1000
dI
F
/dt(A/µs)
10
0
0
200
dI
F
/dt(A/µs)
400
600
800
1000
3/12
STMICROELECTRONICS [ STMICROELECTRONICS ]
