STP60NF06
STP60NF06FP
N-CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
STP60NF06
STP60NF06FP
s
s
s
s
V
DSS
60 V
60 V
R
DS(on)
< 0.016
Ω
< 0.016
Ω
I
D
60A
60A
TYPICAL R
DS
(on) = 0.014Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
TO-220
3
1
2
1
2
3
TO-220FP
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
s
AUTOMOTIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
dv/dt (1)
V
ISO
T
stg
T
j
January 2002
Parameter
STP60NF06
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
--
–65 to 175
(1) I
SD
≤
60A, di/dt≤400 A/µs, V
DD
≤
24V, Tj≤T
jMAX
Value
STP60NF06FP
60
60
± 20
60
42
240
110
0.73
4
2500
37
26
148
42
0.28
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
(
q
) Pulse width limited by safe operating area
1/9
STMICROELECTRONICS [ STMICROELECTRONICS ]
