Electrical characteristics
STP60NF06
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating
V
DS
=Max rating, T
C
=125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 30A
2
0.014
Min.
60
1
10
±100
4
0.016
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Table 5.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
Test conditions
V
DS
= 15V
,
I
D
=30A
Min.
Typ.
50
1660
400
140
V
DD
= 30V, I
D
= 60A,
V
GS
= 10V
54
9
23
73
Max.
Unit
S
pF
pF
pF
nC
nC
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 6.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V
DD
= 30V, I
D
= 30A
R
G
= 4.7Ω V
GS
= 10V
V
DD
= 30V, I
D
= 30A,
R
G
= 4.7Ω, V
GS
=10V
Min.
Typ.
15
65
45
20
Max.
Unit
ns
ns
ns
ns
4/12
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