STP60NF06
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
60
20
V
V
Drain current (continuos) at TC = 25°C
Drain current (continuos) at TC = 100°C
Drain current (pulsed)
60
A
ID
42
A
(1)
IDM
240
110
0.74
7.5
A
PTOT
Total dissipation at TC = 25°C
Derating factor
W
W/°C
V/ns
dv/dt (2) Peak diode recovery voltage slope
Tstg
Tj
Storage temperature
– 55 to 175
°C
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤60A, di/dt ≤400 A/µs, VDD ≤48V, Tj ≤Tjmax
Table 2.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
1.36
62.5
°C/W
°C/W
Rthj-a
Tl
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
IAR
30
A
Single pulse avalanche energy
EAS
370
mJ
(starting Tj=25°C, Id=Iar, Vdd=30V)
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STMICROELECTRONICS [ ST ]
