STP10NK70Z/STP10NK70ZFP
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP10NK70Z
STP10NK70ZFP
V
Drain-source Voltage (V = 0)
700
700
± 30
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
8.6
5.4
8.6 (*)
5.4 (*)
34 (*)
35
A
D
C
I
Drain Current (continuous) at T = 100°C
A
D
C
I
( )
Drain Current (pulsed)
34
A
DM
P
Total Dissipation at T = 25°C
150
1.20
W
TOT
C
Derating Factor
0.28
W/°C
KV
V/ns
V
V
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
4000
4.5
ESD(G-S)
dv/dt (1)
V
ISO
-
2500
T
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
j
( ) Pulse width limited by safe operating area
(1) I ≤8.6A, di/dt ≤200A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220
TO-220FP
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
0.83
3.6
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
62.5
300
T
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
8.6
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
350
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
30
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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STMICROELECTRONICS [ ST ]
