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STM8S207R8T6BTR 参数 Datasheet PDF下载

STM8S207R8T6BTR图片预览
型号: STM8S207R8T6BTR
PDF下载: 下载PDF文件 查看货源
内容描述: 性能线, 24兆赫STM8S 8位MCU ,高达128 KB闪存,集成的EEPROM , 10位ADC ,定时器, 2个UART , SPI , I²C , CAN [Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, 2 UARTs, SPI, I²C, CAN]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 103 页 / 1740 K
品牌: STMICROELECTRONICS [ ST ]
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STM8S207xx, STM8S208xx  
Electrical characteristics  
Electromagnetic interference (EMI)  
Emission tests conform to the SAE IEC 61967-2 standard for test software, board layout and  
pin loading.  
Table 48. EMI data  
Conditions  
(1)  
Max fHSE/fCPU  
Symbol  
Parameter  
Unit  
Monitored  
frequency band  
General conditions  
8 MHz/ 8 MHz/ 8 MHz/  
8 MHz 16 MHz 24 MHz  
0.1MHz to 30 MHz  
30 MHz to 130 MHz  
130 MHz to 1 GHz  
15  
18  
-1  
20  
21  
1
24  
16  
4
VDD = 5 V  
Peak level  
dBµV  
TA = 25 °C  
SEMI  
LQFP80 package  
conforming to SAE IEC  
61967-2  
SAE EMI  
level  
SAE EMI level  
2
2.5  
2.5  
1. Data based on characterization results, not tested in production.  
Absolute maximum ratings (electrical sensitivity)  
Based on two different tests (ESD and LU) using specific measurement methods, the  
product is stressed in order to determine its performance in terms of electrical sensitivity.  
For more details, refer to the application note AN1181.  
Electrostatic discharge (ESD)  
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are  
applied to the pins of each sample according to each pin combination. The sample size  
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test  
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application  
note AN1181.  
Table 49. ESD absolute maximum ratings  
Maximum  
Symbol  
Ratings  
Conditions  
Class  
Unit  
value(1)  
Electrostatic discharge voltage  
(Human body model)  
TA = 25°C, conforming to  
VESD(HBM)  
A
2000  
V
V
JESD22-A114  
Electrostatic discharge voltage  
(Charge device model)  
TA= 25°C, conforming to  
JESD22-C101  
VESD(CDM)  
IV  
1000  
1. Data based on characterization results, not tested in production.  
Doc ID 14733 Rev 9  
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