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STM8S207R8T6BTR 参数 Datasheet PDF下载

STM8S207R8T6BTR图片预览
型号: STM8S207R8T6BTR
PDF下载: 下载PDF文件 查看货源
内容描述: 性能线, 24兆赫STM8S 8位MCU ,高达128 KB闪存,集成的EEPROM , 10位ADC ,定时器, 2个UART , SPI , I²C , CAN [Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, 2 UARTs, SPI, I²C, CAN]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 103 页 / 1740 K
品牌: STMICROELECTRONICS [ ST ]
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STM8S207xx, STM8S208xx  
Electrical characteristics  
10.3.4  
Internal clock sources and timing characteristics  
Subject to general operating conditions for V and T . f  
HSE  
DD  
A
High speed internal RC oscillator (HSI)  
Table 33. HSI oscillator characteristics  
Symbol  
Parameter  
Frequency  
Conditions  
Min  
Typ  
Max  
Unit  
fHSI  
16  
MHz  
Trimmed by the  
CLK_HSITRIMR register  
for given VDD and TA  
conditions  
Accuracy of HSI oscillator  
-1(1)  
1(1)  
VDD = 5 V, TA = 25 °C  
-1.5  
-2.2  
1.5  
2.2  
ACCHSI  
VDD = 5 V,  
25 °C TA 85 °C  
%
Accuracy of HSI oscillator  
(factory calibrated)  
2.95 V VDD 5.5 V,  
-40 °C TA 125 °C  
-3(2)  
3(2)  
1(1)  
HSI oscillator wakeup  
time including calibration  
tsu(HSI)  
µs  
HSI oscillator power  
consumption  
IDD(HSI)  
170  
250(2)  
µA  
1. Guaranteeed by design, not tested in production.  
2. Data based on characterization results, not tested in production  
Figure 18. Typical HSI frequency variation vs V at 4 temperatures  
DD  
-40˚C  
25˚C  
85˚C  
125˚C  
3%  
2%  
1%  
0%  
-1%  
-2%  
-3%  
2.5  
3
3.5  
4
4.5  
(V)  
5
5.5  
6
V
DD  
ai15067  
Doc ID 14733 Rev 9  
67/103