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STM8S207R8T6BTR 参数 Datasheet PDF下载

STM8S207R8T6BTR图片预览
型号: STM8S207R8T6BTR
PDF下载: 下载PDF文件 查看货源
内容描述: 性能线, 24兆赫STM8S 8位MCU ,高达128 KB闪存,集成的EEPROM , 10位ADC ,定时器, 2个UART , SPI , I²C , CAN [Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, 2 UARTs, SPI, I²C, CAN]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 103 页 / 1740 K
品牌: STMICROELECTRONICS [ ST ]
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STM8S207xx, STM8S208xx  
Electrical characteristics  
Table 16. Current characteristics  
Symbol  
Ratings  
Max.(1)  
Unit  
IVDD  
IVSS  
Total current into VDD power lines (source)(2)  
Total current out of VSS ground lines (sink)(2)  
Output current sunk by any I/O and control pin  
Output current source by any I/Os and control pin  
60  
60  
20  
20  
IIO  
Total output current sourced (sum of all I/O and control pins)  
for devices with two VDDIO pins(3)  
200  
100  
160  
80  
Total output current sourced (sum of all I/O and control pins)  
for devices with one VDDIO pin(3)  
ΣIIO  
mA  
Total output current sunk (sum of all I/O and control pins) for  
devices with two VSSIO pins(3)  
Total output current sunk (sum of all I/O and control pins) for  
devices with one VSSIO pin(3)  
Injected current on NRST pin  
4
4
(4)(5)  
IINJ(PIN)  
Injected current on OSCIN pin  
Injected current on any other pin(6)  
Total injected current (sum of all I/O and control pins)(6)  
4
(4)  
ΣIINJ(PIN)  
20  
1. Data based on characterization results, not tested in production.  
2. All power (VDD, VDDIO, VDDA) and ground (VSS, VSSIO, VSSA) pins must always be connected to the  
external supply.  
3. I/O pins used simultaneously for high current source/sink must be uniformly spaced around the package  
between the VDDIO/VSSIO pins.  
4. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum  
cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive  
injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain pads,  
there is no positive injection current, and the corresponding VIN maximum must always be respected  
5. Negative injection disturbs the analog performance of the device. See note in Section 10.3.10: 10-bit ADC  
characteristics on page 83.  
6. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the  
positive and negative injected currents (instantaneous values). These results are based on  
characterization with ΣIINJ(PIN) maximum current injection on four I/O port pins of the device.  
Table 17. Thermal characteristics  
Symbol  
Ratings  
Value  
Unit  
TSTG  
TJ  
Storage temperature range  
-65 to 150  
150  
°C  
Maximum junction temperature  
Doc ID 14733 Rev 9  
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