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STM8S207R8T6BTR 参数 Datasheet PDF下载

STM8S207R8T6BTR图片预览
型号: STM8S207R8T6BTR
PDF下载: 下载PDF文件 查看货源
内容描述: 性能线, 24兆赫STM8S 8位MCU ,高达128 KB闪存,集成的EEPROM , 10位ADC ,定时器, 2个UART , SPI , I²C , CAN [Performance line, 24 MHz STM8S 8-bit MCU, up to 128 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, 2 UARTs, SPI, I²C, CAN]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 103 页 / 1740 K
品牌: STMICROELECTRONICS [ ST ]
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Electrical characteristics  
STM8S207xx, STM8S208xx  
10.2  
Absolute maximum ratings  
Stresses above those listed as ‘absolute maximum ratings’ may cause permanent damage  
to the device. This is a stress rating only and functional operation of the device under these  
conditions is not implied. Exposure to maximum rating conditions for extended periods may  
affect device reliability.  
Table 15. Voltage characteristics  
Symbol  
Ratings  
Min  
Max  
Unit  
(1)  
V
DDx - VSS Supply voltage (including VDDA and VDDIO  
)
-0.3  
6.5  
6.5  
Input voltage on true open drain pins (PE1, PE2)(2)  
Input voltage on any other pin(2)  
VSS - 0.3  
VSS - 0.3  
V
VIN  
VDD + 0.3  
50  
|VDDx - VDD| Variations between different power pins  
mV  
|VSSx - VSS| Variations between all the different ground pins  
50  
see Absolute maximum  
ratings (electrical  
VESD  
Electrostatic discharge voltage  
sensitivity) on page 87  
1. All power (VDD, VDDIO, VDDA) and ground (VSS, VSSIO, VSSA) pins must always be connected to the  
external power supply  
2. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum  
cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive  
injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain pads,  
there is no positive injection current, and the corresponding VIN maximum must always be respected  
54/103  
Doc ID 14733 Rev 9