STM8S003F3 STM8S003K3
Electrical characteristics
9.3.5
Memory characteristics
RAM and hardware registers
Table 36. RAM and hardware registers
Symbol
V
RM
Parameter
Data retention mode
(1)
Conditions
Halt mode (or reset)
Min
V
IT-max(2)
Unit
V
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production.
2. Refer to
for the value of V
IT-max
.
Flash program memory/data EEPROM memory
General conditions: T
A
= -40 to 85 °C.
Table 37. Flash program memory/data EEPROM memory
Symbol
V
DD
Parameter
Operating voltage
(all modes, execution/write/erase)
Standard programming time (including
erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
Fast programming time for 1 block
(128 bytes)
t
erase
Erase time for 1 block (128 bytes)
Erase/write cycles
(2)
(program memory)
N
RW
Erase/write cycles
(2)
(data memory)
Data retention (program memory)
after 100 erase/write cycles at
T
A
=
85 °C
t
RET
Data retention (data memory) after
10 k erase/write cycles at T
A
=
85 °C
Data retention (data memory) after
100 k erase/write cycles at T
A
=
85 °C
I
DD
Supply current (Flash programming or
erasing for 1 to 128 bytes)
T
RET
= 85° C
-
Conditions
f
CPU
≤
16 MHz
Min
(1)
Typ
2.95
-
Max
5.5
Unit
V
-
-
6.0
6.6
ms
t
prog
-
-
-
-
100
3.0
3.0
-
-
3.3
3.3
-
ms
ms
T
A
=
85 °C
100 k
-
cycles
20
T
RET
= 55° C
20
1.0
-
-
-
years
-
-
2.0
-
-
-
mA
1. Data based on characterization results, not tested in production.
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
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