STM8S003F3 STM8S003K3
Electrical characteristics
9.3.5
Memory characteristics
RAM and hardware registers
Table 36. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Unit
(2)
VRM
Data retention mode(1)
Halt mode (or reset)
VIT-max
V
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design, not tested in production.
2. Refer to Table 20 on page 50 for the value of VIT-max
.
Flash program memory/data EEPROM memory
General conditions: T = -40 to 85 °C.
A
Table 37. Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min(1) Typ Max
Unit
Operating voltage
(all modes, execution/write/erase)
VDD
fCPU ≤ 16 MHz
2.95
-
-
5.5
6.6
V
Standard programming time (including
erase) for byte/word/block
-
6.0
ms
(1 byte/4 bytes/128 bytes)
tprog
Fast programming time for 1 block
(128 bytes)
-
-
-
-
3.0
3.0
-
3.3
3.3
-
ms
ms
Erase time for 1 block (128 bytes)
terase
Erase/write cycles(2)
(program memory)
100
NRW
TA = 85 °C
cycles
Erase/write cycles(2)
(data memory)
100 k
20
-
-
-
-
Data retention (program memory)
after 100 erase/write cycles at
TA = 85 °C
T
RET = 55° C
tRET
Data retention (data memory) after
10 k erase/write cycles at TA = 85 °C
years
mA
20
1.0
-
-
-
-
-
-
Data retention (data memory) after
100 k erase/write cycles at TA = 85 °C
TRET = 85° C
-
Supply current (Flash programming or
erasing for 1 to 128 bytes)
IDD
2.0
1. Data based on characterization results, not tested in production.
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
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