STM8S003F3 STM8S003K3
Electrical characteristics
HSE oscillator critical g formula
m
gmcrit = (2 × Π × fHSE)2 × Rm(2Co + C)2
R : Notional resistance (see crystal specification)
m
L : Notional inductance (see crystal specification)
m
C : Notional capacitance (see crystal specification)
m
Co: Shunt capacitance (see crystal specification)
C =C =C: Grounded external capacitance
L1
L2
g >> g
m
mcrit
9.3.4
Internal clock sources and timing characteristics
Subject to general operating conditions for V and T . f
HSE
DD
A
High speed internal RC oscillator (HSI)
Table 34. HSI oscillator characteristics
Symbol
Parameter
Frequency
Conditions
Min
Typ
Max
Unit
fHSI
-
-
16
-
MHz
Trimmed by the
CLK_HSITRIMR register
for given VDD and TA
conditions(1)
Accuracy of HSI oscillator
-
-
1.0(2)
ACCHSI
%
VDD = 5 V, TA = 25 °C
-
5
-
-
Accuracy of HSI oscillator
(factory calibrated)
VDD = 5 V,
-40 °C ≤ TA ≤ 85 °C
-5
5
HSI oscillator wakeup
time including calibration
tsu(HSI)
-
-
-
-
-
1.0(2)
µs
HSI oscillator power
consumption
IDD(HSI)
170
250(3)
µA
1. See the application note.
2. Guaranteed by design, not tested in production.
3. Data based on characterization results, not tested in production
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