STM8S003K3 STM8S003F3
Electrical characteristics
Figure 36: Typical NRST pull-up current vs VDD @ 4 temperatures
The reset network shown in the following figure protects the device against parasitic resets.
The user must ensure that the level on the NRST pin can go below VIL(NRST) max. (see
#unique_55/CD662 ), otherwise the reset is not taken into account internally.
For power consumption sensitive applications, the external reset capacitor value can be
reduced to limit the charge/discharge current. If NRST signal is used to reset external circuitry,
attention must be taken to the charge/discharge time of the external capacitor to fulfill the
external devices reset timing conditions. Minimum recommended capacity is 10 nF.
Figure 37: Recommended reset pin protection
V
DD
R
STM8
PU
External
reset
NRST
Internal reset
Filter
circuit
0.1 µF
(optional)
9.3.8
SPI serial peripheral interface
Unless otherwise specified, the parameters given in the following table are derived from tests
performed under ambient temperature, fMASTER frequency and VDD supply voltage conditions.
tMASTER = 1/fMASTER
.
Refer to I/O port characteristics for more details on the input/output alternate function
characteristics (NSS, SCK, MOSI, MISO).
DocID018576 Rev 2
77/99
STMICROELECTRONICS [ ST ]
