STM8S003K3 STM8S003F3
Electrical characteristics
Flash program memory and data EEPROM
Table 36: Flash program memory and data EEPROM
Symbol Parameter
Conditions
Typ Max
Unit
Min
(1)
VDD
Operating voltage (all
modes, execution/
fCPU ≤ 16 MHz
2.95
5.5
V
write/erase)
tprog
Standard programming time
(including erase) for
6
6.6
byte/word/block (1 byte/
4 bytes/64 bytes)
ms
Fast programming time for
1 block (64 bytes)
3
3
3.33
3.33
terase
Erase time for 1 block
(64 bytes)
NRW
Erase/write cycles(2)
(program memory)
100
TA = 85 °C
cycles
Erase/write cycles(2)
(data memory)
100 k
tRET
Data retention (program
memory) after 100
erase/write cycles at TA =
85 °C
20
20
1
TRET = 55°C
Data retention (data
memory) after 10 k
erase/write cycles at TA =
85 °C
years
Data retention (data
memory) after 100 k
erase/write cycles at TA =
85 °C
TRET = 85°C
IDD
Supply current (Flash
programming or erasing
for 1 to 128 bytes)
2
mA
DocID018576 Rev 2
65/99
STMICROELECTRONICS [ ST ]
