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STM8S003F3P6 参数 Datasheet PDF下载

STM8S003F3P6图片预览
型号: STM8S003F3P6
PDF下载: 下载PDF文件 查看货源
内容描述: 价值线, 16兆赫STM8S 8位MCU , 8 KB闪存, 128字节的数据EEPROM , 10位ADC , 3个定时器, UART , SPI , I& SUP2 ; ç [Value line, 16 MHz STM8S 8-bit MCU, 8 Kbytes Flash, 128 bytes data EEPROM, 10-bit ADC, 3 timers, UART, SPI, I²C]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 99 页 / 952 K
品牌: STMICROELECTRONICS [ ST ]
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Electrical characteristics  
STM8S003K3 STM8S003F3  
Figure 9: fCPUmax versus VDD  
f
(MHz)  
CPU  
Functionality  
not  
16  
12  
8
guaranteed  
in this area  
Functionality guaranteed  
@T -40 to 85 °C  
A
4
0
4.0  
Supply voltage  
2.95  
5.0  
5.5  
Table 19: Operating conditions at power-up/power-down  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDD rise time rate  
2
tVDD  
μs/V  
VDD fall time rate(1)  
2
tTEMP  
VIT+  
VIT-  
Reset release delay  
VDD rising  
1.7  
2.85  
2.8  
ms  
V
Power-on reset threshold  
Brown-out reset threshold  
2.6  
2.5  
2.7  
2.65  
70  
VHYS(BOR) Brown-out reset hysteresis  
mV  
(1) Reset is always generated after a tTEMP delay. The application must ensure that VDD is still above the  
minimum ooperating voltage (VDD min) when the tTEMP delay has elapsed.  
9.3.1  
VCAP external capacitor  
Stabilization for the main regulator is achieved connecting an external capacitor CEXT to the  
VCAP pin. CEXT is specified in the Operating conditions section. Care should be taken to limit  
the series inductance to less than 15 nH.  
Figure 10: External capacitor CEXT  
C
ESR  
ESL  
Rleak  
1. ESR is the equivalent series resistance and ESL is the equivalent inductance.  
50/99  
DocID018576 Rev 2  
 
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